High Quality Si Grown by LPCVD at Low Temperature with silane
碩士 === 國立交通大學 === 電子研究所 === 84 === We have designed a simple hot-wall low pressure chemical vapor deposition(LPCVD) system to grow high quality epitaxial Si films from 550 to 900C.The quality of the epitaxial Si film found comparable...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1996
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| Online Access: | http://ndltd.ncl.edu.tw/handle/60959267238038758567 |