A Study of the Properties of Plasma-Deposited Fluorine-Doped SiO2 for Low Dielectric Constant Interlevel Dielectrics
碩士 === 國立交通大學 === 電子研究所 === 84 === We have studied the properties of fluorine-doped silicon dioxide (SiOF)deposited by adding CF4 to conventional tetraethylorthosilicate(TEOS)-basedplasma-enhanced chemical vapor deposition (PECVD). Dielec...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1996
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| Online Access: | http://ndltd.ncl.edu.tw/handle/18848492960420935220 |