Simulation and Characterization of Submicrometer n-MOSFETs
碩士 === 國立交通大學 === 電子研究所 === 84 === The extraction techniques for submicrometer LDD n-MOSFETs with the Reverse-Short-Channel Effect(RSCE) are described, which include theeffective channel length, implant profiles in channel and source/drainr...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1996
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| Online Access: | http://ndltd.ncl.edu.tw/handle/22468446360305906909 |