The Application of CMP on Polysilicon Oxide

• Main Authors: Shiau, Shyh Yin, 蕭世楹
• Other Authors: Tan Fu Lei
• Format: Others
• Language: zh-TW
• Published: 1996
• Online Access: http://ndltd.ncl.edu.tw/handle/79106976791483785431

碩士 === 國立交通大學 === 電子研究所 === 84 === The surface of the polysilicon film polsihed with CMP is smoother than that of the unpolished poysilicon film and they are observed by AFM. The polyoxide grown thermally from the polished polysilicon film has a lower leakage current and a higher breakdown electric field, which are suitable for the nonvolatile memory application. Comparing to conventional polyoxide, a lower electron trapping rate and a larger charge to breakdown(Qbd) are found in the polished sample. Furthermore, the Qbd of the polished samp is much larger (>10x) than that of the unpolished sample under +Vg stress. The trapped charges of the polished sample almost locate at the upper portion of polyoxide and are much reduced. This work also reports on the characteristics of the LPCVD-stacked polyoxide. It exhibit a better dielectric propertiy because the roughness of polyoxide/ poly-1 doesn't enhance during the formation of polyoxide. The characterisitcs of the polished sample are much better than those of the unpolished sample. By the way, forhe 200( thick polyoxide, the Qbd of the polsihed sample is as high as 6 C/cm2 under +Vg stress.