Analysis of Hot-Electron-Induced Oxide Damages and Device Degradations in Submicron MOSFET''s
博士 === 國立交通大學 === 電子研究所 === 84 === This dissertation presents newly-developed profiling methods and an analytical linear drain current degradation model to analyze hot-electron-induced oxide damages (inter- face trap generation and fixed oxide charge trap...
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| Format: | Others |
| Language: | en_US |
| Published: |
1996
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| Online Access: | http://ndltd.ncl.edu.tw/handle/95762788880490008305 |