Study for vacancy-induced layer disordering of AlGaAs-GaAs quantum well heterostructure that utilizes SiO2 cap
碩士 === 國立中山大學 === 材料科學(工程)研究所 === 84 ===
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1996
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| Online Access: | http://ndltd.ncl.edu.tw/handle/79093051920841389625 |