Orientation of the vacancy line defects on Si(100)
碩士 === 國立中山大學 === 物理研究所 === 84 === Using the local-orbital density-functional molecular-dynamics method, we have obtained relaxed Si(100) surfaces with vacancy line defects that are perpendicular and parallel to the surface dimer rows and t...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1996
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| Online Access: | http://ndltd.ncl.edu.tw/handle/66729282645104305987 |