Mobility Parameters Extraction of SOI MOSFET and Self-Heating Study
碩士 === 國立中山大學 === 電機工程研究所 === 84 === We extract mobility parameters of SOI MOSFET base on Lombardi mobility model. In the first step, we define the buried oxide interface charge with a simple process and get parameters by optimal method. In...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1996
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| Online Access: | http://ndltd.ncl.edu.tw/handle/49566889246881820099 |