The High Frequency Model of Power MOSFET - Verification and Parameter Analysis
碩士 === 國立清華大學 === 電機工程研究所 === 84 === High-frequency high-power devices have been valued recently as the demand of communication and power electronics increased. The main streams of material and structure are III-V family (eg GaAs) and MESFET. Many small-signal models and analysis methods have been p...
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| Format: | Others |
| Language: | en_US |
| Published: |
1996
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| Online Access: | http://ndltd.ncl.edu.tw/handle/23959029551456306645 |