Modeling velocity overshoot for deep-submicron VLSI MOS devices
碩士 === 國立臺灣大學 === 電機工程研究所 === 84 === This thesis presents a closed-form analytical velocity over- shoot model for 0.1 micron NMOS devices taking into account energy transport. In addition, it describes the impact of the velocity overshoot on the source-ga...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1996
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| Online Access: | http://ndltd.ncl.edu.tw/handle/74215134950940520823 |