| Summary: | 碩士 === 大同工學院 === 電機工程學系 === 84 === As larger mismatch and interdiffusion between PZT thin film and
Si(100) substrateit is hard to crystallize and easy to crack for
PZT thin film grown on Si. Thus wewe introduced buffer layers to
grow highly oriented PZT thin film. First of all,the effect of
Pt buffer layer on crystalline quality and electric properties
of PZTthin films were explored. The well-chosen thickness of Pt
is 200 nm for preparinghighly PZT(001) films. Subsequently,
since highly annealing temperature and/or long processing time
will cause a lot of Pb volatilizing and form
nonperovskitephases, the appropriate annealing condition is that
annealing at 600 C for 1 h.The electric properties of PZT thin
film annealed at this condition were: remanent polarization was
2.28 uC/cm2, coercive field was 41.7 kV/cm, the
effectivedielectric constant was 103, the leakage current
density was 4.96*10-6 A/cm2 whenthe applied field is 5 V, the
switching time was 0.4 us when the load resistance
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