Sol-Gel Derived Ferroelectric PZT Thin Films for Memory, Optical Waveguide and SAW Applications

• Main Authors: Wang, Hsien-Min, 王憲民
• Other Authors: Mu-Shiang Wu
• Format: Others
• Language: zh-TW
• Published: 1996
• Online Access: http://ndltd.ncl.edu.tw/handle/06917311974749196846

碩士 === 大同工學院 === 電機工程學系 === 84 === As larger mismatch and interdiffusion between PZT thin film and Si(100) substrateit is hard to crystallize and easy to crack for PZT thin film grown on Si. Thus wewe introduced buffer layers to grow highly oriented PZT thin film. First of all,the effect of Pt buffer layer on crystalline quality and electric properties of PZTthin films were explored. The well-chosen thickness of Pt is 200 nm for preparinghighly PZT(001) films. Subsequently, since highly annealing temperature and/or long processing time will cause a lot of Pb volatilizing and form nonperovskitephases, the appropriate annealing condition is that annealing at 600 C for 1 h.The electric properties of PZT thin film annealed at this condition were: remanent polarization was 2.28 uC/cm2, coercive field was 41.7 kV/cm, the effectivedielectric constant was 103, the leakage current density was 4.96*10-6 A/cm2 whenthe applied field is 5 V, the switching time was 0.4 us when the load resistance