Sol-Gel Derived Ferroelectric PZT Thin Films for Memory, Optical Waveguide and SAW Applications
碩士 === 大同工學院 === 電機工程學系 === 84 === As larger mismatch and interdiffusion between PZT thin film and Si(100) substrateit is hard to crystallize and easy to crack for PZT thin film grown on Si. Thus wewe introduced buffer layers to grow highly...
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ndltd-TW-084TTIT04420302016-02-03T04:32:08Z http://ndltd.ncl.edu.tw/handle/06917311974749196846 Sol-Gel Derived Ferroelectric PZT Thin Films for Memory, Optical Waveguide and SAW Applications 利用溶膠-凝膠法成長鐵電性鋯鈦酸鉛薄膜及其在記憶體,光波導與表面聲波之應用 Wang, Hsien-Min 王憲民 碩士 大同工學院 電機工程學系 84 As larger mismatch and interdiffusion between PZT thin film and Si(100) substrateit is hard to crystallize and easy to crack for PZT thin film grown on Si. Thus wewe introduced buffer layers to grow highly oriented PZT thin film. First of all,the effect of Pt buffer layer on crystalline quality and electric properties of PZTthin films were explored. The well-chosen thickness of Pt is 200 nm for preparinghighly PZT(001) films. Subsequently, since highly annealing temperature and/or long processing time will cause a lot of Pb volatilizing and form nonperovskitephases, the appropriate annealing condition is that annealing at 600 C for 1 h.The electric properties of PZT thin film annealed at this condition were: remanent polarization was 2.28 uC/cm2, coercive field was 41.7 kV/cm, the effectivedielectric constant was 103, the leakage current density was 4.96*10-6 A/cm2 whenthe applied field is 5 V, the switching time was 0.4 us when the load resistance Mu-Shiang Wu 吳慕鄉 1996 學位論文 ; thesis 113 zh-TW |
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NDLTD |
description |
碩士 === 大同工學院 === 電機工程學系 === 84 === As larger mismatch and interdiffusion between PZT thin film and
Si(100) substrateit is hard to crystallize and easy to crack for
PZT thin film grown on Si. Thus wewe introduced buffer layers to
grow highly oriented PZT thin film. First of all,the effect of
Pt buffer layer on crystalline quality and electric properties
of PZTthin films were explored. The well-chosen thickness of Pt
is 200 nm for preparinghighly PZT(001) films. Subsequently,
since highly annealing temperature and/or long processing time
will cause a lot of Pb volatilizing and form
nonperovskitephases, the appropriate annealing condition is that
annealing at 600 C for 1 h.The electric properties of PZT thin
film annealed at this condition were: remanent polarization was
2.28 uC/cm2, coercive field was 41.7 kV/cm, the
effectivedielectric constant was 103, the leakage current
density was 4.96*10-6 A/cm2 whenthe applied field is 5 V, the
switching time was 0.4 us when the load resistance
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author2 |
Mu-Shiang Wu |
author_facet |
Mu-Shiang Wu Wang, Hsien-Min 王憲民 |
author |
Wang, Hsien-Min 王憲民 |
spellingShingle |
Wang, Hsien-Min 王憲民 Sol-Gel Derived Ferroelectric PZT Thin Films for Memory, Optical Waveguide and SAW Applications |
author_sort |
Wang, Hsien-Min |
title |
Sol-Gel Derived Ferroelectric PZT Thin Films for Memory, Optical Waveguide and SAW Applications |
title_short |
Sol-Gel Derived Ferroelectric PZT Thin Films for Memory, Optical Waveguide and SAW Applications |
title_full |
Sol-Gel Derived Ferroelectric PZT Thin Films for Memory, Optical Waveguide and SAW Applications |
title_fullStr |
Sol-Gel Derived Ferroelectric PZT Thin Films for Memory, Optical Waveguide and SAW Applications |
title_full_unstemmed |
Sol-Gel Derived Ferroelectric PZT Thin Films for Memory, Optical Waveguide and SAW Applications |
title_sort |
sol-gel derived ferroelectric pzt thin films for memory, optical waveguide and saw applications |
publishDate |
1996 |
url |
http://ndltd.ncl.edu.tw/handle/06917311974749196846 |
work_keys_str_mv |
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