Investigation of Quantum Well Infrared Photodetetors on (311)A GaAs and In0.52Al0.48As/InAs/InxAl1-xAs Pseudomorphic HEMT on InP
碩士 === 中華大學 === 電機工程研究所 === 85 === We have studied two Si-doped p-type quantum well infrared photodetectors (QWIPs) using AlGaAs/GaAs and AlGaAs/InGaAs grown on (311)A GaAs and In0.52Al0.48As/InAs/InxAl1-xAs Pseudomorphic HEMT on InP. The Si-doped AlGaAs/GaAs p-QWIP exhibits a symmetrical da...
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| Format: | Others |
| Language: | en_US |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/22835325982873516878 |