Study on InP Epitaxial Layers by Epitaxial Lateral Overgrowth
碩士 === 中原大學 === 電子工程研究所 === 85 === The major purpose of this study identified Epitaxial Lateral Overgrowth(ELO) technique. It offers the flexible approach to larger applied fields for semiconductor material in the future if we can maturely confirm this technique. In this study, we use the LPE...
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| Format: | Others |
| Language: | zh-TW |
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1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/16510452144716628247 |