Ultra Shallow p+/n Junction for Deep Submicrometer Devices by Incorporating N2+ Implantation
碩士 === 逢甲大學 === 電機工程研究所 === 85 === In this thesis, a novel technology for ultra-shallow p+/n junctions by implanting N2+ before BF2+ implantation were studied ,the dosages and energies of N2+were varied from 1e13 to 1e15cm^-2 and from 20 to...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/43104484430053714900 |