Investigation of High-Speed n-p-n Type Heterostructure Transistors and Multiple Negative-Differential-Resistance Devices
博士 === 國立成功大學 === 電機工程學系 === 85 === In this Dissertation, we report five heterostructure bipolar transistors ( HBT''s) and one field-effect transistor (FET) based on n-p-n structures, i.e., AlInAs/GaInAs heterostructure-emitter-confinement bipolar transistors...
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| Format: | Others |
| Language: | en_US |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/02564916901289687181 |