Investigation of Functional AlGaAs/InGaAs/GaAs Heterostructure-Emittter and Heterostructure-Base Transistors (HEHBT'S)
碩士 === 國立成功大學 === 電機工程研究所 === 85 === In this thesis, the functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base bipolar transistors (HEHBT's) with an abrupt or a graded confinement layer are fabricated and demonstrated. Due to the insertion of InGaAs quantum well at...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | en_US |
Published: |
1997
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Online Access: | http://ndltd.ncl.edu.tw/handle/25374839316439500836 |