Investigation of Functional AlGaAs/InGaAs/GaAs Heterostructure-Emittter and Heterostructure-Base Transistors (HEHBT'S)

碩士 === 國立成功大學 === 電機工程研究所 === 85 ===   In this thesis, the functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base bipolar transistors (HEHBT's) with an abrupt or a graded confinement layer are fabricated and demonstrated. Due to the insertion of InGaAs quantum well at...

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Bibliographic Details
Main Authors: Cheng, C.C., 鄭錦泉
Other Authors: Liu, W.C.
Format: Others
Language:en_US
Published: 1997
Online Access:http://ndltd.ncl.edu.tw/handle/25374839316439500836