Structure and Defect of GaN Studied by Transmission Electron Microscopy
碩士 === 國立交通大學 === 材料科學與工程研究所 === 85 === In this thesis, we have studied the structure and defect of GaN films grown on (0001)sapphire by transmission electron microscope (TEM). We have grown low temperature (525 C) GaN buffer layer on...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/90391915710489768495 |