Application of high temperature deposited Aluminum gate electrode on the fabrication of a-Si TFT
碩士 === 國立交通大學 === 材料科學與工程研究所 === 85 === The electrical performances of hydrogenated amorphous silicon (a-Si:H), thinfilm transistors are affected by the surface roughness of SiNx/a-Si:H. If wecould get a smooth Al film, the SiNx and a-Si:H...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/33955215316522525437 |