| Summary: | 碩士 === 國立交通大學 === 材料科學與工程研究所 === 85 === The electrical performances of hydrogenated amorphous silicon
(a-Si:H), thinfilm transistors are affected by the surface
roughness of SiNx/a-Si:H. If wecould get a smooth Al film, the
SiNx and a-Si:H film would be more flatter.The high deposited
temperature of Al film are expected to suppress hillocks
formation. The surface roughness are related to Al(111) and it's
deposited temperature. On the other hand, a suitable Al2O3/SiNx
double layered insulatorsare applied to fabricate TFT. It has
been found that the characteristics of a-Si:H TFT device is
strong dependent on the morphology of Al film. When deposited
temperature of Al film was 300℃, the surface roughness was most
smoothest and for the double layered (Al2O3/SiNx) insulators,
the MIM structure of anodized Al2O3 show a breakdown fields as
high as 8.188 MV/cm and a low leakage current density of
8.35*10^-8 A/cm, As a result.The a-Si:H TFT fabricated on the
smoothest Al/SiNx morphology shows the best performances : μ
FET=0.71 cm2/V-sec, Ssub=0.32V/decade. For the double layered
(Al2O3/SiNx) insulators TFT, has the best performances : μFET
=0.78 cm2/V-sec, Ssub=0.28 V/decade.
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