The techniques for interpoly dielectric in high-density flash memory devices by using nitrogen passivation of polysilicon
碩士 === 國立交通大學 === 材料科學與工程研究所 === 85 === The flash-type EEPROM or flash-type EPROM is expected to be a most promising device for the next-generation nonvolatile memory market due to the growing demad high density non-volatile memory for...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/19036788574742031493 |