Physics and Device Applications of Si/Si1-xGex Quantum Well Structures Grown by Ultrahigh Vacuum Chemical Vapor Deposition
碩士 === 國立交通大學 === 電子工程學系 === 85 === In this thesis, the growth of Si and strained Si1-xGex alloy epitaxial layer have been investigated by ultrahigh vacuum chemical vapor deposition (UHV/CVD) in the temperature range of 600 - 475℃. The physical properties...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/17263886108099700011 |