Chemical-Vapor-Deposited Tantalum Pentoxide and Titanium Dioxide Thin Films for High-Density DRAM Storage Capacitor Applications
博士 === 國立交通大學 === 電子工程學系 === 85 === Two promising high dielectric constant materials for advanced DRAM storage capacitors: tantalum pentoxide (Ta2O5) and titanium dioxide (TiO2), were investigated in this thesis. These thin films were deposited by low pr...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/26672904563259867245 |