Modeling of gate leakage current in thin oxide n-MOS devices
碩士 === 國立交通大學 === 電子工程學系 === 85 === In this thesis, the electron transport across thin oxide films (<5nm) was characterized and modeled. Two major physical phenomena, electron-wave quantum interference and surface quantization, were ta...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/30782859736536334748 |