The Instabilities of the Hydrogenated Amorphous Silicon Thin- film Transistors with Positive and Negative AC Bias Stresses on the Gate Electrodes
碩士 === 國立交通大學 === 電子工程學系 === 85 === The characteristics of the a-Si:H TFTs can be affected by the composition of the gate dielectric and a-Si:H layers. By comparing the different samples of a-Si:H TFTs, it is confirmed that the instability...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/71310707717605832420 |