| Summary: | 碩士 === 國立交通大學 === 電子工程學系 === 85 === In this thesis , the parameter extraction of P-MOSFETs is made
first before quantitatively analyzing on the degradation of
short-channel P-MOSFETs. The charge-pumping method developed by
Advanced Semiconductor Device Reasearch Laboratory has been
used to profiling the distributions of the interface-state
density and the oxide traps and the results are taken to explain
the I-V characteristics. We concentrate our analysis on the
reliability of buried-channel P-MOSFETs. When the fresh devices
are measured by the charge-pumping method , some strange
phenomenon has been discovered and is dramatically different
from N-MOSFET*s. The surface-channel P-MOSFETs thus are measured
for comparisons. We find that such a phenomenon only appears on
counter-implanted buried-channel P-MOSFETs. The existence of the
active-region defects due to counter-implant is the major reason
to account for the distribution of interface-state density we
measured. After stressing for a long time , the active-region
defects appear the minor effects on the profiling of the
interface-state density. Therefore , the results can be used to
explain the I-V characteristics including the subthreshold
characteristics , turn-on current and substrate current. Based
on these analyses , we can improve the device design for high
performance and reliability applications. In addition , the
active-region defects measured by the charge-pumping method can
also help us for the process improvement.
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