Reliability Evaluation for Various Programming Techniques in P- channel MOSFET Flash Memories
碩士 === 國立交通大學 === 電子工程學系 === 85 === Hot-carrier injection induced device reliability has been a major concernin modern flash memory device design. Most of the reliability studies on flash memory have been paid on n-channel cell structure...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/76966377247593668528 |