The Impact of Back-Gate Bias on Gate current Injection in Submicron MOSFET's

• Main Authors: Hu, Chu-Wei, 胡楚威
• Other Authors: Ming-Jer Chen
• Format: Others
• Language: zh-TW
• Published: 1997
• Online Access: http://ndltd.ncl.edu.tw/handle/82783093785235778755

碩士 === 國立交通大學 === 電子工程學系 === 85 === This thesis extensively explores the gate current by channel initated secondary electron injection(CISEI) in 0.35um gate length n-type LDD MOSFET's.The CISEI mechanism is observed to dominate the gate current especially at low supply voltage operation, and is found to be a strong function of back gate bias. A new analytic model has been for the first time developed and has successfully reproduced all experimental data from three different device sizes each at different bias conditions. This model also provides a transparent understanding of the CISEI mechanism: the channel electrons impactionize the lattice and create the holes flowing down to the substrate; then secondary electrons are generated via impact ionization by these holes and feed back to the surface beneath gate; simultaneously the secondary electrons gaining the energy from the back-gate bias induced vertical field as well as from the pinch-off lateral field, enough to overcome the Si/SiO2 barrier height and constitute the gate current. This model can further serve as a useful tool for low voltage nonvolatile memory device design.