Fabrication and characterization of Ga0.47In0.53As mesa p-i-n
碩士 === 國立交通大學 === 電子物理學系 === 85 === In this study, we fabricated and characterized Ga0.47In0.53As p- i-n photodectors. Starting from InP/Ga0.47In0.53As/InP or InAlAs/Ga0.47In0.53As/InP lattice-matched double heterostructures, we designed an...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/12041572898099972233 |