Growth of silicon carbide thin films from 1,2-dimethyldisilane by low temperature chemical vapor deposition
碩士 === 國立交通大學 === 應用化學研究所 === 85 === 1,2-Dimethyldisilane was used as a single precursor to deposit siliconcarbide thin films by low pressure chemical vapor deposition. The filmswere deposited under two different conditions which were thermal activation only and with Ar as the carri...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/43683318001581858821 |