Ion beam sputted TiO2 film with dopping Si,Al,SiO2
碩士 === 國立中央大學 === 光電(科學)研究所 === 85 === Oxides of Ti was deposited by ion beam sputter deposition with a Kaufman-type ion source.The dopping Al(Si,SiO2) improved stoichiometryand surface roughness of TiO2 film. To make a weakly absorbing...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/29314131025327023545 |