The effects of ion beam characteristic on growth of diamond-like films
碩士 === 國立中央大學 === 光電(科學)研究所 === 85 === The deposition of hydrogenated diamond-like films on silicon substrate wascarried out using a microwave ( 2.45 GHz ) electron cyclotron resonance( ECR ) ion beam source . Ion energy, gas pressure ratio...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/83382816433394478642 |