Piezoreflectance of annealed low-temperature grown GaAs
碩士 === 國立中央大學 === 物理學系 === 85 === The low-temperature GaAs grown at 200C by MBE contains excess arsenic,causing a high concentration of point defects. After annealed at 600C, excessarsenic precipitates in the layer and becomes semi-...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/78384971763374847809 |