The study of reactive ion etching GaN and InGaN
碩士 === 國立中央大學 === 電機工程學系 === 85 === This study is focused on the effects of GaN and InGaN of the most important processes of GaN-based materials, reactive ion etching(RIE). We found that when we use Boron trichloride to be the reactive gas,...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/97997864522490135658 |