Study on GaN Epilayers Prepared by OMCVD

碩士 === 國立中山大學 === 電機工程研究所 === 85 === The materials based on GaN have been successfully developed on short-wavelength laser diodes (LDs) and light-emitting diodes (LEDs). In this study, GaN epilayers have been successfully grown on sapphire substrates. We used several methods including the gro...

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Bibliographic Details
Main Authors: Chao, Wei-Chou, 趙偉州
Other Authors: Lee, Ming-Kwei
Format: Others
Language:en_US
Published: 1997
Online Access:http://ndltd.ncl.edu.tw/handle/55020775830953010642