Study on GaN Epilayers Prepared by OMCVD

• Main Authors: Chao, Wei-Chou, 趙偉州
• Other Authors: Lee, Ming-Kwei
• Format: Others
• Language: en_US
• Published: 1997
• Online Access: http://ndltd.ncl.edu.tw/handle/55020775830953010642

碩士 === 國立中山大學 === 電機工程研究所 === 85 === The materials based on GaN have been successfully developed on short-wavelength laser diodes (LDs) and light-emitting diodes (LEDs). In this study, GaN epilayers have been successfully grown on sapphire substrates. We used several methods including the growth of the GaN buffer layer, nitridation process before the growth and the adjustment of the vertical distance between the outlet of group-Ⅲ to the substrate on graphite to the growth of GaN epilayers. From the results of the photoluminescence (PL) measured at 77K and the X-Ray diffraction measurement, we get the better qualities of the GaN epilayers after using the foregoing methods. In this study, the optimal results of the 77K PL measurement and X-Ray diffraction measurement were 51 meV and 191 arcsec.