Study on GaN Epilayers Prepared by OMCVD
碩士 === 國立中山大學 === 電機工程研究所 === 85 === The materials based on GaN have been successfully developed on short-wavelength laser diodes (LDs) and light-emitting diodes (LEDs). In this study, GaN epilayers have been successfully grown on sapphire substrates. We used several methods including the gro...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1997
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/55020775830953010642 |