Study and Fabrication of 250nm*250nm Contact Structure
碩士 === 國立清華大學 === 電機工程學系 === 85 === The contact behavior and long term reliability stress of Al- based /TiN/Tisi2 p+ n contact have been studied in this work .This was achived through the use of cross-bridge Kelvin contact resitancestructur...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/85913810779705332183 |
| Summary: | 碩士 === 國立清華大學 === 電機工程學系 === 85 === The contact behavior and long term reliability stress of Al-
based /TiN/Tisi2 p+ n contact have been studied in this work
.This was achived through the use of cross-bridge Kelvin contact
resitancestructure and the use of 2-step rapid thermal
silicidation of self-aligned silicide ( salicide).The minmum
contact area was 250nm*250nm.The Ti film was deposited through
collimator or not in sputter.The sepecific contact resistivity
wsa about 4.55~6ohm-cm2.The result of reliability test showed
that the contact resistance of submicron contact increased or
decreased with the stress time under high currnt denity stress.
The possible reason are electromigration and joule heating
.Thus,this degration is worth studying in future ULSI circuits.
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