| Summary: | 碩士 === 國立清華大學 === 電機工程學系 === 85 === The purpose of this paper is to know that different thickness
TiNwhich variations of stress to different size of contact hole
willhave any changes on shallow junction leakage current.we use
ionimplant through an amorphous thin film,then sputtering Ti to
formTisilicide and shallow junction at the same time by two step
RTA(rapid thermal annealing),matching contact hole of difference
sizeand TiN of difference thickness ,and measuring leakage
current atreverse bias 5(V).Besides,by XRD to know TiN and TiSi2
orientation,SIMS to obrserve junction depth.The result indicated
that between LPCVD TiN 500A and TiN 300A sample which deposit
TiN 300A had smallerJrp.In addition,sputtering Ti on a-Si first
by RTA 650,700,750 30sec and second by 900 30sec,we can find the
first higer RTA temperaturecan get better TiSi2 that is low
resistivity and more C54 phase.It can also efficently reduce Jrp
of shallow junction.Furthermore by SEM,we get junction depth
about 700A.
|
|---|
