Modeling Partially-Depleted SOI NMOS Device
碩士 === 國立臺灣大學 === 電機工程學系 === 85 === This thesis reports a closed-form analytical temperature- dependent kink effect model and a transit-time model for the partially-depleted SOI NMOS devices. Based on the body-emitter voltage model, an a...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/04523849549427799487 |