The Study on InGaAsP and InTlP Alloys Grown by Gas Source Molecular Beam Epitaxy
博士 === 國立臺灣大學 === 電機工程學系 === 85 === In this study, the growths of InGaAsP and InTlP semiconductor alloys by gas-source molecular beam epitaxy (GSMBE) were investigated. In the study on InGaAsP alloys, a series of InGaAsP bulk layers were successfully grow...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/47881830683713167510 |