Etching Copper Films in Fluorine Plasma
碩士 === 國立台灣工業技術學院 === 化學工程技術研究所 === 85 === The etching of copper films has been examined in fluorine plasma over a range of F2 pressure between 0.1 and 0.4 torr, and temperature between 508 and 568 K. The partial pressure of fluorine atom (...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/91839580519316741679 |