Etching Copper Films in Fluorine Plasma

• Main Authors: Liao, Chun-Hsiung, 廖春雄
• Other Authors: Lee Chiapyng
• Format: Others
• Language: zh-TW
• Published: 1997
• Online Access: http://ndltd.ncl.edu.tw/handle/91839580519316741679

碩士 === 國立台灣工業技術學院 === 化學工程技術研究所 === 85 === The etching of copper films has been examined in fluorine plasma over a range of F2 pressure between 0.1 and 0.4 torr, and temperature between 508 and 568 K. The partial pressure of fluorine atom (F) was measured by properly calibrating the mass spectrometer. The etch rate was as high as 3841 /min at a temperature of 568 K and F partial pressure of 0.06 torr. The etch rate increased with increasing F partial pressure. However, the etch rate dropped after reaching the maximum. The chemical composition and surface morphology of copper films after etching were investigated by x-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM). CuF2 was observed on the surface and the grain size of copper films became larger.