Study of Low-Frequency Noise Characteristics of Pre-stress and Hot-Carrier-Stressed Submicronmeter MOSFETs
碩士 === 國立台灣工業技術學院 === 電子工程技術研究所 === 85 === As device dimensions of MOSFET are scaled down into the submicrometer and deep submicrometer regime, the channel electric field becomes large. Electrons and holes can gain high-energy from the high electric f...
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/78832135757434868731 |