液相磊晶生長砷化鋁鎵氧化層之研製與應用
碩士 === 中正理工學院 === 電機工程研究所 === 86 === Abstract Gallium Asenide (GaAs) compound semiconductor are widely used in high speed devices, because of their high mobility in contrast to silicon. However, the main advantage of silicon is its ability to form high quality thermal oxides,...
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| Format: | Others |
| Language: | zh-TW |
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1998
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| Online Access: | http://ndltd.ncl.edu.tw/handle/48875732825989678746 |