液相磊晶生長砷化鋁鎵氧化層之研製與應用
碩士 === 中正理工學院 === 電機工程研究所 === 86 === Abstract Gallium Asenide (GaAs) compound semiconductor are widely used in high speed devices, because of their high mobility in contrast to silicon. However, the main advantage of silicon is its ability to form high quality thermal oxides,...
Main Authors: | Hong-June Li, 黎鴻俊 |
---|---|
Other Authors: | Liann-Be Chung |
Format: | Others |
Language: | zh-TW |
Published: |
1998
|
Online Access: | http://ndltd.ncl.edu.tw/handle/48875732825989678746 |
Similar Items
-
低溫液相磊晶生長砷化鎵極薄層之研製與應用
by: 唐和慶
Published: (1997) -
液相磊晶砷化鎵鋁薄膜及其特性
by: LUO, YU-ZHEN, et al. -
三元砷化鎵鋁/砷化鎵液相磊晶成長現象之模擬
by: YANG, JIAN-WEN, et al.
Published: (1986) -
雙異質結構砷化鋁鎵╱磷化銦鎵╱砷化鋁鎵相磊晶生長之研究
by: ZHANG, LIAN-BI, et al.
Published: (1989) -
對液相磊晶系統生長砷化鎵發光二極體的研究
by: JIANG, GI-GUANG, et al.