The Effective Channel Length and Source-Drain Series Resistance Extraction of Short Channel MOSFET
博士 === 中正理工學院 === 國防科學研究所 === 86 === Abstract A new technique of determining the effective channel length by directly measuring source-drain series resistance of metal-oxide-semiconductor field-effect transistors (MOSFETs) was proposed. By using MOSFETs with scaled gate lengths, the sou...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1998
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| Online Access: | http://ndltd.ncl.edu.tw/handle/79240897943427255183 |