A study of Schottky contact devices simulation
碩士 === 中正理工學院 === 電機工程研究所 === 86 === In this study, a two-dimension device simulator is employed to analyze the electronic properties of high speed devices（such as Doide、MESFET、MISFET and MOSFET etc..）The carrier distri- butions considered here involve both the Boltzmann and Fermi- Dirac statistics...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1998
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| Online Access: | http://ndltd.ncl.edu.tw/handle/58471608050788623872 |