A study of Schottky contact devices simulation

• Main Authors: Tu, Gao-Wei, 涂高維
• Other Authors: Zhang, Lian-Bi
• Format: Others
• Language: zh-TW
• Published: 1998
• Online Access: http://ndltd.ncl.edu.tw/handle/58471608050788623872

碩士 === 中正理工學院 === 電機工程研究所 === 86 === In this study, a two-dimension device simulator is employed to analyze the electronic properties of high speed devices（such as Doide、MESFET、MISFET and MOSFET etc..）The carrier distri- butions considered here involve both the Boltzmann and Fermi- Dirac statistics. While, the Poisson*s equation and the conti- nuity equation are solved in the numerical analysis for each device. The process for these analysis is started with the non- linear equations being descretized in a two-dimensional space, and consequently a coupling matrix is obtained. Then, a method named ICCG（Incomplete Cholesky-Decomposition and Conjugate Gradient）is used to solve the whole matrix equations. Based on the process described above, we are able to compari- son the simulation data and experimental value. Further more , we can extract some valuable parameters by using of those para- meters , a more correct model can be astablished. And we can use this model to predict or design GaAs device to fit our detail needs.