A study of Schottky contact devices simulation
碩士 === 中正理工學院 === 電機工程研究所 === 86 === In this study, a two-dimension device simulator is employed to analyze the electronic properties of high speed devices(such as Doide、MESFET、MISFET and MOSFET etc..)The carrier distri- butions considered here involve both the Boltzmann and Fermi- Dirac statistics...
Main Authors: | , |
---|---|
Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
1998
|
Online Access: | http://ndltd.ncl.edu.tw/handle/58471608050788623872 |